2SB1016 transistor equivalent, silicon pnp transistor.
.
High
Breakdown
Voltage
:
V^g =-100V (3
. Low Collector-Emitter Satura tion Voltage
= VCE(sat) =-2.0V(Max.) . Complementary to 2SD1407
. Recommended for 30W Hig.
FEATURES
.
High
Breakdown
Voltage
:
V^g =-100V (3
. Low Collector-Emitter Satura tion Voltage
= VCE(sat) =-2.0.
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