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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2206
Power Amplifier Applications Power Switching Applications
2SA2206
Unit: mm
Low collector emitter saturation voltage : VCE (sat) = -0.5 V (max) (IC = -1A)
High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC6124
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current (Note 1)
Base current Collector power dissipation
(Note 2) Junction temperature Storage temperature range
DC Pulse
t = 10 s DC
VCBO VCEO VEBO
IC ICP IB PC PC Tj Tstg
-80
V
-80
V
-7
V
-2
A
-4
A
-0.5
A
2.5 W
1
150
°C
−55 to 150 °C
1: BASE 2: COLLECTOR (HEAT SINK) 3: EMITTER
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.