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2SA2206 - Silicon PNP Transistor

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Datasheet Details

Part number 2SA2206
Manufacturer Toshiba
File Size 309.06 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA2206 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Power Switching Applications 2SA2206 Unit: mm Low collector emitter saturation voltage : VCE (sat) = -0.5 V (max) (IC = -1A) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC6124 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range DC Pulse t = 10 s DC VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg -80 V -80 V -7 V -2 A -4 A -0.5 A 2.5 W 1 150 °C −55 to 150 °C 1: BASE 2: COLLECTOR (HEAT SINK) 3: EMITTER JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.