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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
2SA1931
High-Current Switching Applications
2SA1931
Unit: mm
• Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881
Maximum Ratings (Tc = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating
−60 −50 −7 −5 −1 2.0 20 150 −55 to 150
Electrical Characteristics (Tc = 25°C)
Unit V V V A A
W
°C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.
2SA1931 Datasheet
