2SA1090
2SA1090 is Silicon PNP transistor manufactured by Toshiba.
:
I2
)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
HIGH SPEED SWITCHING APPLICATIONS.
Features
- High Breakdown Voltage : VCECP-50V (Kin.), Veb'0=-8V (Min.)
- High Gain and Excellent hps Linearity
: h FE=70 ~ 400 at Vce=-1V, I c=-10m A
- plementary to 2SC2550.
Unit in mm
05.8Uk X.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO v CEO v EBO
IB PC
L stg
RATING -60 -50
UNIT
-200 m A
-50 m A
300 m W
-65^175
1. EMITTER Z. BASE 3. COLLECTOR (CASE)
TOSHIBA
TO 18
- 7 ,...
