2N4123 transistor equivalent, silicon npn transistor.
. Low Leakage Current
: ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA
. Low Collector Output Capaci.
FEATURES . Low Leakage Current
: ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : VC E(sat.
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