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2N4123 Datasheet, Toshiba

2N4123 transistor equivalent, silicon npn transistor.

2N4123 Avg. rating / M : 1.0 rating-12

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2N4123 Datasheet

Features and benefits

. Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capaci.

Application

FEATURES . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat.

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2N4123 Page 1 2N4123 Page 2

TAGS

2N4123
Silicon
NPN
Transistor
2N4124
2N4125
2N4126
Toshiba

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