2N3906 transistor equivalent, silicon pnp transistor.
. Low Leakage Current
: ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: v CE(sat)=-0.4V(Max.) @ Ic=.
Unit in mm
5.1 MAX.
FEATURES: . Low Leakage Current
: ICEV=-50nA(Max.), lBEV=50nA(Max . @ VcE=-30V, VBE=3V
. Excellen.
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