Datasheet Summary
:
)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Unit in mm
Features
. Low Leakage Current
: ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance
: C b=4.5pF(Max.) @ VCB =-5V . plementary to 2N3903
J EDEC
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
&- Collector-Base Voltage
VCBO
-40
- X Collector-Emitter Voltage
VCEO
-40
- Emitter-Base Voltage
- Collector Current vebo ic
-5 -200
Base Current
-50
-...
