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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2N3905
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Unit in mm
FEATURES . Low Leakage Current
: ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance
: C b=4.5pF(Max.) @ VCB =-5V . Complementary to 2N3903
J EDEC
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
&• Collector-Base Voltage
VCBO
-40
•X Collector-Emitter Voltage
VCEO
-40
* Emitter-Base Voltage * Collector Current
vebo ic
-5 -200
Base Current
IB
-50
* Collector Power Dissipation
350
(Ta=25°C) Derate Linearly 25°C
PC
2.8
* Collector Power Dissipation
1.
2N3905 Datasheet
