• Part: 2N3905
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 63.77 KB
Download 2N3905 Datasheet PDF
Toshiba
2N3905
FEATURES . Low Leakage Current : ICEV= -50n A(Max.), T-BEV= 50n A(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max.) @ I C =-50m A, I B =-5m A . Low Collector Output Capacitance : C b=4.5p F(Max.) @ VCB =-5V . plementary to 2N3903 J EDEC 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING &- Collector-Base Voltage VCBO -40 - X Collector-Emitter Voltage VCEO -40 - Emitter-Base Voltage - Collector Current vebo ic -5 -200 Base Current -50 - Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C - Collector Power Dissipation (Tc=25°C) Detate Linearly 25°C ?C - - Thermal Resistance (Junction to Ambient) R th(j-a) - X Thermal Resistance (Junction to Case) R th(j-c) - X Junction...
2N3905 reference image

Representative 2N3905 image (package may vary by manufacturer)