Part 2N3905
Description Silicon PNP Transistor
Category Transistor
Manufacturer Toshiba
Size 63.77 KB
Toshiba

2N3905 Overview

Key Features

  • Low Leakage Current : ICEV= -50nA(Max.), T-BEV= 50nA(Max
  • @ V C E=-30V, Vbe=3V
  • Excellent DC Current Gain Linearity
  • Low Saturation Voltage : V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA
  • Low Collector Output Capacitance : C b=4.5pF(Max.) @ VCB =-5V
  • Complementary to 2N3903 J EDEC - EMITTER - BASE - COLLECTOR
2N3905 reference image

Representative 2N3905 image (package may vary by manufacturer)