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2N3905 Datasheet Toshiba

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Features and Benefits

. Low Leakage Current : ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low.

2N3905 2N3905 2N3905
TAGS
Silicon
PNP
Transistor
2N3902
2N3903
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