2N3904 - Silicon NPN Transistor

Toshiba

Key Features

. Low Leakage Current : ICEV=50nA(Max. ), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V C E(sat)=0.3V(Max. ) @ I c=50mA, lB=5mA . Low Collector Output Capacitance : C b=4pF(Max. ) @ V C B=5V . Complementary to 2N3906 Unit in mm 1.

2N3904 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N3904
Manufacturer	Toshiba
File Size	71.96 KB
Description	Silicon NPN Transistor
Datasheet	2N3904 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . FEATURES . Low Leakage Current : ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA . Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V . Complementary to 2N3906 Unit in mm 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO RATING 60 40 6 TOSHIBA Weight : 0.21g UNIT V V V Collector Current ic 200 mA Base Current IB Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C PC 50 mA 350 mW 2.8 mW/°C Collector Power Dissipation 1.