2N3903 - Silicon NPN Transistor

Toshiba

Key Features

. Low Leakage Current : ICEV=50nA(Max. ), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0.3V(Max. ) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance : C ob=4pF(Max. ) @ V C B=5V . Complementary to 2N3905 ' Unit in mm 1.

2N3903 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N3903
Manufacturer	Toshiba
File Size	70.25 KB
Description	Silicon NPN Transistor
Datasheet	2N3903 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2N3904	Silicon NPN Transistor
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2N3713	GENERAL PURPOSE POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3903 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICEV=50nA(Max.), I BEV =-50nA(Max. @ V C E=30V, VB E=-3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : VcE(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance : C ob=4pF(Max.) @ V C B=5V . Complementary to 2N3905 ' Unit in mm 1. EMITTER 2. BASE 3. COLLECTOR flAXIMUn RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Collector Current ic 200 Base Current IB 50 Collector Power Dissipation 350 (Ta=25°C) Derate Linearly 25°C PC 2.