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2N3789 Datasheet, Toshiba

2N3789 transistor equivalent, silicon pnp transistor.

2N3789 Avg. rating / M : 1.0 rating-12

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2N3789 Datasheet

Features and benefits

. High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sat)=-1.0V (Max.) @ Ic=-4A, I B=-0.4A Unit in mm MAXIMUM RAT.

Application

FEATURES . High Gain and Excellent hFE Linearity: hFE=15 (Min.) @ VC E=-2V, I C=-3A . Low Saturation Voltage: VCE(sa.

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2N3789 Page 1 2N3789 Page 2

TAGS

2N3789
SILICON
PNP
Transistor
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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