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SILICON NPN TRIPLE DIFFUSED TYPE
2N3714
GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS.
FEATURES . High Gain at High Current . Low Saturation Voltage: VcE(sat)=l-OV (Max.)
@ IC=5A, I B=0.5A . Excellent Area of Safe Operatings
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Thermal Resistance Junction Temperature Storage Temperature Range
SYMBOL VcBO VCEO VeBO ic IB
'jc
L stg
RATING 100 80
10
150 1.17 200
-65-200
UNIT
Unit in mm
j^2 50MAX_.
21.01MAX,
f=;
f Znz
+ao9 I
A_,o-ao4 i n
A-
30i2±Q.2
+1
'C/W
1. BASE 2. EMITTER
COLLECTOR (CASE)
TO—2 4MA/TO-3
EIAJ TOSHIBA
TC—3 , TB-3 2—21D1A
Weight : 12.
2N3714 Datasheet
