1ZB6.8 - SILICON DIFFUSED TYPE ZENER DIODE

Toshiba

Datasheet Details

Part number	1ZB6.8
Manufacturer	Toshiba
File Size	131.38 KB
Description	SILICON DIFFUSED TYPE ZENER DIODE
Datasheet	1ZB6.8 Datasheet
Additional preview pages of the 1ZB6.8 datasheet.

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Full PDF Text Transcription

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1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Dissipation l Peak Reverse Power Dissipation l Zener Voltage l Tolerance of Zener Voltage l Plastic Mold Package : P = 1.0W : PRSM = 200W at tw = 200µs : VZ = 6.8~390V : ±10% MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL P Tj Tstg RATING 1.0 −40~150 −40~150 UNIT W °C °C MARK JEDEC JEITA TOSHIBA Weight: 0.18g ― ― 3−3F2A 1 2001-07-09 1ZB6.8~1ZB390 ELECTRICAL CHARACTERISTICS (Ta = 25°C) TYPE 1ZB6.8 1ZB7.5 1ZB8.2 1ZB9.

Published: Jul 12, 2015 |