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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS422
High-Speed Switching Applications
Low forward voltage VF(2) = 0.23 V (typ.) @ IF = 5 mA Small package suitable for mounting on a small space
1SS422
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature range Operating temperature range
VRM VR IFM IO IFSM P Tj Tstg Topr
35
V
30
V
200*
mA
100*
mA
1*
A
100
mW
125
°C
55 to 125
°C
40 to 100
°C
1.ANODE1 2.CATHODE2 3.CATHODE1
ANODE2
Note: Using continuously under heavy loads (e.g.
1SS422 Datasheet
