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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS406
High Speed Switching Application
1SS406
Unit: mm
z Low forward voltage z Low reverse current z Small total capacitance
: VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
25 V
Reverse voltage
VR 20 V
Maximum (peak) forward current IFM 100 mA
Average forward current Surge current (10ms) Power dissipation
IO IFSM P*
50 mA 1A 200 mW
USC
Junction temperature
Tj 125 °C
Storage temperature range
Tstg −55 to 125 °C JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
1SS406 Datasheet
