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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS405
High Speed Switching Application
1SS405
Unit: mm
z Low forward voltage z Low reverse current z Small total capacitance
: VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
25 V
Reverse voltage
VR 20 V
Maximum (peak) forward current IFM 100 mA
Average forward current
IO 50 mA
Surge current (10ms)
IFSM
1A
Power dissipation
P * 150 mW
Junction temperature Storage temperature range
Tj
125 °C JEDEC JEITA
Tstg −55 to 125 °C TOSHIBA
― ― 1-1G1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.4mg(Typ.
1SS405 Datasheet
