Datasheet4U Logo Datasheet4U.com

XP222P08013R-G - P-channel MOSFET

Key Features

  • On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝0.56Ω@VGS =-4.5V : -1.8V : EU RoHS Compliant, Pb Free.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XP222N0301TR-G N-channel MOSFET Torex
XP2206 A tube Photonis
XP2210 Silicon NPN epitaxial planer transistor Panasonic Semiconductor
XP2211 Silicon NPN epitaxial planer transistor Panasonic Semiconductor
XP2212 photomultiplier tubes PHOTONIS

Other Datasheets by Torex Semiconductor

Part Number Description
XP222P0801TR-G P-channel MOSFET
XP222N03013R-G N-channel MOSFET
XP222N03015R-G N-channel MOSFET
XP222N03017R-G N-channel MOSFET
XP221P0501TR-G P-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XP222P08013R-G P-channel MOSFET -20V, -0.8A ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝0.56Ω@VGS =-4.5V : -1.