Datasheet4U Logo Datasheet4U.com

TPP60R580C - 600V Super-Junction Power MOSFET

Key Features

  • Very low FOM RDS(on)×Qg.
  • 100% avalanche tested.
  • RoHS compliant.

📥 Download Datasheet

Datasheet Details

Part number TPP60R580C
Manufacturer Tongfang
File Size 335.39 KB
Description 600V Super-Junction Power MOSFET
Datasheet download datasheet TPP60R580C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPP60R150C 600V Super-junction Power MOSFET Unigroup
TPP60R160M 600V Super-junction Power MOSFET Unigroup
TPP60R240M 600V Super-junction Power MOSFET Unigroup
TPP60R350C 600V Super-junction Power MOSFET Unigroup
TPP60308 60-V 3.5-A Step-Down DC/DC Converter 3PEAK

Other Datasheets by Tongfang

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPP60R580C, TPA60R580C, TPU60R580C, TPD60R580C Wuxi Tongfang Microelectronics Company 600V Super-Junction Power MOSFET FEATURES  Very low FOM RDS(on)×Qg  100% avalanche tested  RoHS compliant APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TPP60R580C TO-220 60R580C TPA60R580C TO-220F 60R580C TPU60R580C TO-251 60R580C TPD60R580C TO-252 60R580C Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol TO-220 Value TO-251 TO-252 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current (note1) Repetitive Avalanc