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MUR3060G - 30 Ampere Single Glass Passivated Chip Ultrafast Recovery Rectifier Diode

Features

  • ‹ Glass passivated chip junction EPI wafer ‹ Ultrafast recovery time for high efficiency ‹ Low reverse leakage current ‹ High surge capacity Mechanical Data ‹ Case: TO-220AC heatsink ‹ Terminals: Lead solderable per MIL-STD-202, Method 208 ‹ Polarity: As marked ‹ Standard packaging: Any ‹ Weight: 2.5 gram approximately TO-220AC .419(10.66) .387(9.85) .139(3.55) MIN .269(6.85) .226(5.75) .624(15.87) .548(13.93) Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .177(4.5)MAX .50(12.7.

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Datasheet Details

Part number MUR3060G
Manufacturer Thinki Semiconductor
File Size 1.00 MB
Description 30 Ampere Single Glass Passivated Chip Ultrafast Recovery Rectifier Diode
Datasheet download datasheet MUR3060G Datasheet
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Full PDF Text Transcription

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MUR3060G ® Pb Free Plating Product MUR3060G Pb 30 Ampere Single Glass Passivated Chip Ultrafast Recovery Rectifier Diode Features ‹ Glass passivated chip junction EPI wafer ‹ Ultrafast recovery time for high efficiency ‹ Low reverse leakage current ‹ High surge capacity Mechanical Data ‹ Case: TO-220AC heatsink ‹ Terminals: Lead solderable per MIL-STD-202, Method 208 ‹ Polarity: As marked ‹ Standard packaging: Any ‹ Weight: 2.5 gram approximately TO-220AC .419(10.66) .387(9.85) .139(3.55) MIN .269(6.85) .226(5.75) .624(15.87) .548(13.93) Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .177(4.5)MAX .50(12.7)MIN .038(0.96) .019(0.50) .025(0.65)MAX .1(2.54) .1(2.
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