IRF740PBF mosfet equivalent, n-channel type power mosfet.
* RDS(on) (Max 0.55 Ω )@VGS=10V
* Gate Charge (Typical 48nC)
* Improved dv/dt Capability
* High ruggedness
* 100% Avalanche Tested
1. Gate {
{ 2. Dr.
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche c.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 899.88KB)