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HFA08TB120 Datasheet 1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

Manufacturer: Thinki Semiconductor

Datasheet Details

Part number HFA08TB120
Manufacturer Thinki Semiconductor
File Size 612.61 KB
Description 1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
Download HFA08TB120 Download (PDF)

General Description

HFA08TB120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.

ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C.

Reverse Voltage 1200 V V RRM Maximum Repetitive Reverse Voltage 1200 V I F(AV) Average Forward Current TC=110°C 10 A IF(RMS) RMS Forward Current TC=110°C 15 A I FSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 100 A PD Power Dissipation 70 W TJ T STG Torque Junction Temperature Storage Temperature Range Module-to-Sink Recommended(M3) -40 to +150 °C -40 to +150 °C 1.1 N·m R θJC Thermal Resistance Junction-to-Case Weight ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions I RM Reverse Leakage Current VR=1200V VR=1200V, TJ=125°C 1.8 °C /W 2.2 g TC=25°C unless otherwise specified Min.

Overview

HFA08TB120 ® HFA08TB120 Pb Pb Free Plating Product 10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply ·.