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FQP65N06 - N-Channel Power MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V.
  • Low gate charge ( typical 48 nC).
  • Low Crss ( typical 100 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating 1. Gate { { 2. Drain.
  • ◀▲.
  • { 3. Source BVDSS = 60V RDS(ON) = 0.016 ohm ID = 65A General.

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Datasheet Details

Part number FQP65N06
Manufacturer Thinki Semiconductor
File Size 1.12 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FQP65N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQP65N06 ® FQP65N06 Pb Pb Free Plating Product 65A,60V Heatsink Planar N-Channel Power MOSFET Features • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 100 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 60V RDS(ON) = 0.016 ohm ID = 65A General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.