logo

FQP50N06 Thinki Semiconductor N-Channel Power MOSFET

Thinki Semiconductor
Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application. BVDSS = 60V RDS(ON) = 0.022 ohm ID = 50A ...
Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating 1. Gate { { 2. Drain
● ◀▲

● { 3. Source General Description This N-channel enhancement mode field-effect power transistor using ...

Datasheet PDF File FQP50N06 Datasheet 1.03MB

FQP50N06   FQP50N06   FQP50N06  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map