F20A60CT - 20.0 Ampere Dual Common Cathode Fast Recovery Rectifier Diode

Product Overview

Thinki Semiconductor

Part number	F20A60CT
Manufacturer	Thinki Semiconductor
File Size	603.29 KB
Description	20.0 Ampere Dual Common Cathode Fast Recovery Rectifier Diode
Datasheet	F20A60CT Datasheet
Note	This datasheet PDF includes multiple part numbers: F20A60CT, F20C20CT. Please refer to the document for exact specifications by model.
Additional preview pages of the F20A60CT datasheet.

Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability.

📁 Similar Datasheet

F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2013 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2021 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F2041 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

Other Datasheets by Thinki Semiconductor

Published: May 3, 2024 |