DB105S Datasheet | Thinki Semiconductor

Features - Glass passivated chip junction - Low forward voltage drop - High surge overload rating of 50 A peak - Ideal for printed circuit board DB-S/DF-S Unit : inch (mm) .060(1.524) .004(0.10) .011(0.28) .335(8.51) .316(8.05) .009(0.25) .255(6.5) .245(6.2) .410(10.4) .360(9.40) Mechanical Data - Case: Molded plastic, DB-S/DF-S - Epoxy: UL 94V-0 rate flame retardant - Terminals: Leads solderable per MIL-STD-202, - Mounting position: Any .205(5.2) .195(5.0) .045(1.14) .035(0.89) Absolute Maximum Ratings and Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbols VRRM VRMS VDC I(AV) IFSM VF at TA = 25 C at TA = 125 OC DB101S DB102S DB103S DB104S DB105S DB106S DB107S DF005S DF01S DF02S DF04S DF06S DF08S DF10S .089(2.5) .086(2.2) method 208 guaranteed .310(7.9) .290(7.4) .040(1.016) Unit Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 40 OC Peak Forward Surge Current 8.3 ms Single Half-sine-wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1 A Maximum Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance 1) Typical Thermal Resistance Typical Thermal Resistance 2) 2) 50 35 50 100 70 100 200 140 200 400 280 400 1 50 1.1 5 500 25 40 15 600 420 600 800 560...