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CS48N18 Datasheet, Thinki Semiconductor

CS48N18 mosfet equivalent, n-channel trench process power mosfet.

CS48N18 Avg. rating / M : 1.0 rating-17

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CS48N18 Datasheet

Features and benefits


* VDS=70V;ID=158A@ VGS=10V; RDS(ON)<4.2mΩ @ VGS=10V
* Special Designed for E-Bike Controller Application
* Ultra Low On-Resistance
* High UIS and UIS 100%.

Application

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applic.

Description

The CS48N18 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features
* VDS=7.

Image gallery

CS48N18 Page 1 CS48N18 Page 2 CS48N18 Page 3

TAGS

CS48N18
N-Channel
Trench
Process
Power
MOSFET
CS48N10
CS48N75
CS48N78
Thinki Semiconductor

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