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SN74F1018 Datasheet

18-Bit Schottky Barrier Diode RC Bus-Termination Array

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Designed to Reduce Reflection Noise
Repetitive Peak Forward
Current . . . 300 mA
18-Bit Array Structure Suited for
Bus-Oriented Systems
description
This bus-termination array is designed to reduce
reflection noise and minimize ringing on
high-performance bus lines. The SN74F1018
features an 18-bit R-C network and Schottky
barrier diode array. These Schottky diodes
provide clamp-to-ground functionality and serve
to minimize overshoot and undershoot of
high-speed switching buses.
The SN74F1018 is characterized for operation
from 0°C to 70°C.
schematic diagram
GND GND A18
24 23
22
A17
21
A16
20
A15
19
A14
18
SN74F1018
18-BIT SCHOTTKY BARRIER DIODE
R-C BUS-TERMINATION ARRAY
SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993
DW PACKAGE
(TOP VIEW)
GND
GND
A1
A2
A3
A4
A5
A6
A7
A8
A9
GND
1
2
3
4
5
6
7
8
9
10
11
12
24 GND
23 GND
22 A18
21 A17
20 A16
19 A15
18 A14
17 A13
16 A12
15 A11
14 A10
13 GND
A13
17
A12
16
A11
15
A10
14
GND
13
12
3
45
67
8
9 10 11 12
GND GND A1 A2 A3 A4 A5 A6 A7 A8 A9 GND
Resistor = 50 ± 10%
Capacitor = 47 pF ± 10%, VR = 2.5 V, f = 1 MHz
Diode = Schottky
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1993, Texas Instruments Incorporated
2–1


Texas Instruments (TI) Electronic Components Datasheet

SN74F1018 Datasheet

18-Bit Schottky Barrier Diode RC Bus-Termination Array

No Preview Available !

SN74F1018
18-BIT SCHOTTKY BARRIER DIODE
R-C BUS-TERMINATION ARRAY
SDFS094 – NOVEMBER 1992 – REVISED DECEMBER 1993
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Steady-state reverse voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Continuous forward current, IF: Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 mA
Repetitive peak forward current, IFRM‡: Any D terminal from GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
Total through all GND terminals . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 A
Continuous total power dissipation at (or below) 25°C free-air temperature . . . . . . . . . . . . . . . . . . . . 500 mW
Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ These values apply for tw 100 µs, duty cycle 20%.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
single-diode operation (see Note 1)
PARAMETER
TEST CONDITIONS
MIN TYP† MAX UNIT
IR Static reverse current
VR = 7 V
2 µA
VF Static forward voltage
IF = 18 mA
IF = 50 mA
0.8 1
V
1 1.2
VFM Peak forward voltage
IF = 200 mA
1.25 V
VR = 0
80
Ct Total capacitance
VR = 2 V
60 pF
VR = 3 V
55
† All typical values are at TA = 25°C.
NOTE 1: Test conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER
TEST CONDITIONS
Ix Internal crosstalk current
Total GND current = 1.2 A,
See Note 2
NOTE 2: Ix is measured under the following conditions with one diode static, all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%;
Static diode: VR = 5 V; the static diode input current is the internal crosstalk current Ix.
MIN TYP† MAX UNIT
10 50 µA
switching characteristics, TA = 25°C
PARAMETER
TEST CONDITIONS
trr Reverse recovery time IF = 10 mA, IRM(REC) = 10 mA, IR(REC) = 1 mA, RL = 100
MIN TYP† MAX UNIT
8 10 ns
undershoot characteristics
PARAMETER
VUS Undershoot voltage
TEST CONDITIONS
tf = 2 ns, tw = 50 ns, VIH = 5 V, VIL = 0, ZS = 25 , ZO = 50 ,
L = 36-inch coaxial cable
MIN TYP† MAX UNIT
0.7 0.8 V
2–2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265


Part Number SN74F1018
Description 18-Bit Schottky Barrier Diode RC Bus-Termination Array
Maker Texas
Total Page 5 Pages
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