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Texas Instruments (TI) Electronic Components Datasheet

SN74BCT2410 Datasheet

11-Bit MOS Memory Driver

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SN74BCT2410
11ĆBIT MOS MEMORY DRIVER
WITH 3ĆSTATE OUTPUTS
SCBS119B − JUNE 1990 − REVISED NOVEMBER 1993
State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
Output Ports Have Equivalent 33-Series
Resistors, So No External Resistors Are
Required
Packaged in Plastic Small-Outline (DW)
Package
description
The SN74BCT2410 is a noninverting 11-bit
buffer/line driver specifically designed to drive
MOS DRAMs of up to 4 megabits. It is also suitable
for use with wide data paths or buses carrying
parity. The outputs, which are designed to source
1 mA and sink 12 mA, include 33-series
resistors to reduce overshoot and undershoot.
DW PACKAGE
(TOP VIEW)
A1
A2
A3
A4
A5
OE1
VCC
GND
OE2
Y5
Y4
Y3
Y2
Y1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 A6
27 A7
26 A8
25 A9
24 A10
23 A11
22 GND
21 GND
20 Y11
19 Y10
18 Y9
17 Y8
16 Y7
15 Y6
The output-enable (OE1 and OE2) inputs are routed internally to a two-input AND gate with active-low inputs.
When both OE1 and OE2 are low, the Y outputs are active (high or low logic level). When either OE1 or OE2
is high, the Y outputs are in the high-impedance state.
The multiple ground pins of the SN74BCT2410 reduce switching noise for more reliable system operation.
The SN74BCT2410 is characterized for operation from 0°C to 70°C.
FUNCTION TABLE
INPUTS
OE1 OE2 A
OUTPUT
Y
LLL
L
L LH
H
XHX
Z
HXX
Z
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1993, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
1


Texas Instruments (TI) Electronic Components Datasheet

SN74BCT2410 Datasheet

11-Bit MOS Memory Driver

No Preview Available !

SN74BCT2410
11ĆBIT MOS MEMORY DRIVER
WITH 3ĆSTATE OUTPUTS
SCBS119B − JUNE 1990 − REVISED NOVEMBER 1993
logic symbol
OE1
OE2
6
9
&
EN
logic diagram (positive logic)
OE1
OE2
6
9
1
A1
2
A2
3
A3
4
A4
5
A5
28
A6
27
A7
26
A8
25
A9
24
A10
23
A11
14
Y1
13
Y2
12
Y3
11
Y4
10
Y5
15
Y6
16
Y7
17
Y8
18
Y9
19
Y10
20
Y11
A1 1
14 Y1
To Ten Other Channels
This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
schematic of each output
VCC
GND
Output
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443


Part Number SN74BCT2410
Description 11-Bit MOS Memory Driver
Maker Texas
Total Page 6 Pages
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