11ĆBIT MOS MEMORY DRIVER
WITH 3ĆSTATE OUTPUTS
SCBS119B − JUNE 1990 − REVISED NOVEMBER 1993
• State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
• ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
• Output Ports Have Equivalent 33-Ω Series
Resistors, So No External Resistors Are
• Packaged in Plastic Small-Outline (DW)
The SN74BCT2410 is a noninverting 11-bit
buffer/line driver specifically designed to drive
MOS DRAMs of up to 4 megabits. It is also suitable
for use with wide data paths or buses carrying
parity. The outputs, which are designed to source
1 mA and sink 12 mA, include 33-Ω series
resistors to reduce overshoot and undershoot.
The output-enable (OE1 and OE2) inputs are routed internally to a two-input AND gate with active-low inputs.
When both OE1 and OE2 are low, the Y outputs are active (high or low logic level). When either OE1 or OE2
is high, the Y outputs are in the high-impedance state.
The multiple ground pins of the SN74BCT2410 reduce switching noise for more reliable system operation.
The SN74BCT2410 is characterized for operation from 0°C to 70°C.
OE1 OE2 A
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1993, Texas Instruments Incorporated
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