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TD99102 - High-speed FET and GaN Transistor Driver

General Description

The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs.

Key Features

  • TID = 100 krad(Si).
  • SEL Immune.
  • High- and Low-side FET drivers.
  • Dead-time control.
  • Fast propagation delay, 9 ns.
  • Tri-state enable mode.
  • Sub-nanosecond rise and fall time.
  • 2 A / 4 A peak source/sink current.
  • Bumped flip chip die.

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Datasheet Details

Part number TD99102
Manufacturer Teledyne
File Size 1.35 MB
Description High-speed FET and GaN Transistor Driver
Datasheet download datasheet TD99102 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TD99102 - Die Specifications UltraCMOS® High-speed FET and GaN Transistor Driver, 20 MHz Product Specification Features • TID = 100 krad(Si) • SEL Immune • High- and Low-side FET drivers • Dead-time control • Fast propagation delay, 9 ns • Tri-state enable mode • Sub-nanosecond rise and fall time • 2 A / 4 A peak source/sink current • Bumped flip chip die Applications • dc–dc conversions • ac–dc conversions • Orbital Point of Load (POL) module power distribution • Motor driver Product Description The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs.