| Description | The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs. The outputs of the TD99102 are capable of providing switching transition speeds in the subnanosecond range for switching applications up to 20 MHz. The TD99102 is optimized for matched dead ... |
| Features |
• TID = 100 krad(Si) • SEL Immune • High- and Low-side FET drivers • Dead-time control • Fast propagation delay, 9 ns • Tri-state enable mode • Sub-nanosecond rise and fall time • 2 A / 4 A peak source/sink current • Bumped flip chip die Applications • dc –dc conversions • ac –dc conversions • Orbital Point of Load (POL) module power distribution • ... |
| Datasheet |
 TD99102 Datasheet - 1.35MB |
