Datasheet4U Logo Datasheet4U.com

TDM3578 - N-Channel Enhancement Mode MOSFET

Description

The TDM3578 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

  • RDS(ON).

📥 Download Datasheet

Datasheet preview – TDM3578

Datasheet Details

Part number TDM3578
Manufacturer Techcode
File Size 794.24 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM3578 Datasheet
Additional preview pages of the TDM3578 datasheet.

📁 Similar Datasheet

  • TDM300 - Twin Diode Module (Microsemi Corporation)
  • TDM30002 - Twin Diode Module (Microsemi Corporation)
  • TDM30004 - Twin Diode Module (Microsemi Corporation)
  • TDM30006 - Twin Diode Module (Microsemi Corporation)
  • TDM30008 - Twin Diode Module (Microsemi Corporation)
  • TDM30010 - Twin Diode Module (Microsemi Corporation)
  • TDM30012 - Twin Diode Module (Microsemi Corporation)
  • TDM3021 - Triac Driver (Solid State Optronic)
  • TDM3022 - Triac Driver (Solid State Optronic)
  • TDM3042 - Triac Driver (Solid State Optronic)
Other Datasheets by Techcode
  • TDM3508 - N-Channel Enhancement Mode MOSFET
  • TDM3510 - N-Channel Enhancement Mode MOSFET
  • TDM3514 - Dual N-Channel Enhancement Mode MOSFET
  • TDM3518 - N-Channel Enhancement Mode MOSFET
  • TDM3532 - N-Channel Enhancement Mode MOSFET
  • TDM3534 - Dual N-Channel Enhancement Mode MOSFET
  • TDM3536 - N-Channel Enhancement Mode MOSFET
  • TDM3548 - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
Techcode® N-Channel Enhancement Mode MOSFET DESCRIPTION The TDM3578 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON) <6.7mΩ @ VGS=10V RDS(ON) < 10.3mΩ @ VGS=4.
Published: |