TDM3514 mosfet equivalent, dual n-channel enhancement mode mosfet.
* 20V/9.7A, RDS(ON) < 9.9mΩ @ VGS=2.5V RDS(ON) < 8.7mΩ @ VGS=3.1V RDS(ON) < 8.2mΩ @ VGS=3.7V RDS(ON) < 7.9mΩ @ VGS=4.0V RDS(ON) < 7.5mΩ @ VGS=4.0V
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GENERAL FEATURES
* 20V/9.7A, RDS(ON) < 9.9mΩ @ VGS=2.5V RDS(ON) < 8.7mΩ @ VGS=3.1V RDS(ON) < 8.2mΩ @ VG.
The TDM3514 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* 20V/9.7A, RDS(ON) < 9.9.
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