TDM3302 mosfet equivalent, n-channel enhancement mode mosfet.
* 30V/100A RDS(ON) <1.1mΩ @ VGS=10V RDS(ON) <1.7mΩ @ VGS=4.5V
* Reliable and Rugged
* Lower Qg and Qgd for high‐speed switching
* Lower RDS(ON) to Minimiz.
GENERAL FEATURES
* 30V/100A RDS(ON) <1.1mΩ @ VGS=10V RDS(ON) <1.7mΩ @ VGS=4.5V
* Reliable and Rugged
* Lowe.
The TDM3302 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* 30V/100A RDS(ON) <1.1mΩ @ VGS=10V RDS(ON) <1.7mΩ @ VGS=4.5V
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