TDM3207 mosfet equivalent, p-channel enhancement mode mosfet.
* ‐20V/‐100A RDS(ON) <3.6mΩ @ VGS=‐2.5V RDS(ON) <2.5mΩ @ VGS=‐4.5V RDS(ON) <2.0mΩ @ VGS=‐10V
* ESD Protection
* Surface Mount Package
* Lead Free.
GENERAL FEATURES
* ‐20V/‐100A RDS(ON) <3.6mΩ @ VGS=‐2.5V RDS(ON) <2.5mΩ @ VGS=‐4.5V RDS(ON) <2.0mΩ @ VGS=‐10.
The TDM3207 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
* ‐20V/‐100A RDS(ON) <3.6mΩ @.
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