TDM2306 mosfet equivalent, n-channel enhancement mode mosfet.
* VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 30mΩ @ VGS=10V
* High Power and current handing capability
* Lead free produ.
*Load switch
*Power management
Schematic diagram Marking and pin Assignment
SOT-23 top view
Absolute Maximum R.
The TDM2306 uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
voltages as low as 2.5V.
GENERAL FEATURES
* VDS = 30V,ID = 5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 35mΩ @ VGS=4.5V RDS(ON) < 3.
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