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* Low RDS(ON) 1.2Ω (Max.) Low gate charge typical @ 32nC (Typ.) Low Crss typical @ 25pF (Typ.) Fast Switching Block Diagram Ordering Information P.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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