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* Low gate charge typical @ 13nC Low Crss typical @ 8.5pF Fast Switching 100% avalanche tested Improved dv/dt capability Block Diagram Order.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully indem.

The TSM5N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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