TSM4410D Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - Load Switch Dc-DC Converters and Motors Drivers Ordering Information Part No. TSM4410DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 70 C Limit 25 ±20 25 50 2.3 2 1.3 +150 -55 to +150 Unit V V A A A W o o Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Maximum DC current limited by the package b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec. Symbol RӨJC RӨJA Limit 30 50 Unit o o C/W C/W 1/6 Version: A07 .. 25V Dual N-Channel MOSFET Electrical Specifications (Ta = 25o C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Dynamic b Conditions VGS = 0V, ID = 250u A VDS = VGS, ID = 250u A VGS = ±20V, VDS = 0V VDS = 25V, VGS = 0V VDS ≥5V, VGS = 10V VGS = 10V, ID = 10A VGS = 4.5V, ID = 8A VDS = 15V, ID = 15A IS = 2.3A, VGS =...