TSM2N7002
Features
.. Advanced trench process technology High density cell design for low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic patible input No secondary breakdown pact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No. TSM2N7002CX Packing Tape & Reel Package SOT-23
Absolute Maximum Rating (Ta = 25o C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta > 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o o
Symbol
VDS VGS ID IDM PD
Limit
60 ± 20 115 800 225 1.8 +150
- 55 to +150
Unit
V V m A m A m W MW/ C o o o
Thermal Performance
Parameter
Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec.
Symbol
TL Rθja
Limit
5 417
Unit
S...
