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TSM2N7002 - 60V N-Channel Enhancement Mode MOSFET

Key Features

  • — www. DataSheet4U. com Advanced trench process technology High density cell design for low on-resistance High input impedance High speed switching — — — — No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-23 package — — — Block Diagram Ordering Information Part No. TSM2N7002CX Packing Tape & Reel Package SOT-23 Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous D.

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Datasheet Details

Part number TSM2N7002
Manufacturer Taiwan Semiconductor Company
File Size 158.66 KB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TSM2N7002 Datasheet

Full PDF Text Transcription for TSM2N7002 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM2N7002. For precise diagrams, and layout, please refer to the original PDF.

TSM2N7002 60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50m...

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RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω Features — www.DataSheet4U.com Advanced trench process technology High density cell design for low on-resistance High input impedance High speed switching — — — — No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-23 package — — — Block Diagram Ordering Information Part No.