TSM2N7000 Datasheet | Taiwan Semiconductor

Description ..The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 200m A DC and can deliver pulsed currents up to 500m A. This product is particularly suited for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features — — — — — High density cell design for low on-resistance Voltage control small signal switch Rugged and reliable High saturation current capability Provide in TO-92 package Ordering Information Part No. TSM2N7000CT A3 TSM2N7000CT B0 Packing Ammo pack Bulk pack Package TO-92 Block Diagram Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage --- Continuous --- Pulsed Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Ta = 25 C Ta > 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG o o Symbol VDS VDGR VGS VGSM ID IDM PD Limit 60 60 ± 20 ± 40 200 500 350 2.8 +150 - 55 to +150 Unit V V V m A m A m W m W/ o C o o Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance Symbol TL Rθja Limit 10 357 Unit S o C/W 1-3 2003/12 rev. A Electrical Characteristics Tj = 25 o C unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance - .. Conditions VGS = 0V, ID = 10u A VGS = 10V, ID = 500m A VGS = 5V, ID = 50m...