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TSM2307 - 30V P-Channel MOSFET

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Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet preview – TSM2307

Datasheet Details

Part number TSM2307
Manufacturer Taiwan Semiconductor Company
File Size 258.37 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet TSM2307 Datasheet
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Full PDF Text Transcription

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30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain www.DataSheet4U.com TSM2307 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 80 @ VGS = -10V 140 @ VGS = -4.5V ID (A) -3 -2 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No.
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