TSM2306 - 30V N-Channel MOSFET

Datasheet Summary

Description

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Features

Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

Taiwan Semiconductor Company

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Datasheet Details

Part number	TSM2306
Manufacturer	Taiwan Semiconductor Company
File Size	262.43 KB
Description	30V N-Channel MOSFET
Datasheet	TSM2306 Datasheet
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30V N-Channel MOSFET SOT-23 www.DataSheet4U.com TSM2306 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 57 @ VGS =10V 94 @ VGS =4.5V ID (A) 3.5 2.8 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No.

Published: Mar 5, 2010 |