TSM2306 Description
30V N-Channel MOSFET SOT-23 .. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 57 @ VGS =10V 94 @ VGS =4.5V ID (A) 3.5 2.8.
TSM2306 Key Features
- Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
- Load Switch PA Switch