TSC5988 Datasheet | Taiwan Semiconductor

Features - Excellent gain characteristics specified up to 10A Ordering Information Part No. TSC5988CT B0 TSC5988CT A3 Structure - Epitaxial Planar Type Package TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Symbol VCBO VCEO VEBO IC Ptot TJ TSTG Limit 150 60 6 5 20 1.0 +150 - 55 to +150 Unit V V V A W C o C o Total Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Electrical Specifications (Ta = 25o C unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Conditions IC =100u A, IE =0 IC =10m A, IB =0 IE =100u A, IC =0 VCB =120V, IE =0 VCB =120V, TA =100ºC VEB =6V, IC =0 IC =100m A, IB =5m A IC =1A, IB =50m A IC =2A, IB =100m A IC =5A, IB =200m A IC =4A, IB =200m A VCE =1V, IC =6A VCE =1V, IC =10m A VCE =1V, IC =2A VCE =1V, IC =5A VCE =1V, IC =10A VCE =10V, IC=100m A VCB =10V, f=1MHz 1/5 Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) 1 VCE(SAT) 2 VCE(SAT) 3 VCE(SAT) 4 VBE(SAT) VBE(ON) h FE 1 h FE 2 h FE 3 h FE 4 f T...