SR3050PT Datasheet | Taiwan Semiconductor

Features a a a a a a a a a Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge capability Epitaxial construction For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications High temperature soldering guaranteed: 250°C/10seconds,0.17”(4.3mm)lead lengths at 5 lbs., (2.3kg) tension Mechanical Data a a a a Cases: JEDEC TO-3P/TO-247AD molded plastic Terminals: Leads solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Weight: 0.2 ounce, 5.6 grams a Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at Tc=100°C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 15.0A (Note 3) Maximum D.C. Reverse Current @ Tc=25°C at Rated DC Blocking Voltage @ Tc=100°C Typical Thermal Resistance Per Leg (Note 1) SR3020PT SR3030PT SR3040PT SR3050PT SR3060PT Units V V V A A 20 14 20 30 21 30 40 28 40 30 275 50 35 50 60 42 60 0.55 1.0 75 1.5 V m A m A °C/W p F °C °C 750 -65 to +125 -65 to +150 Notes: 1. Thermal Resistance from Junction to Case Per Leg. Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Notes: 3. 300 us Pulse Width, 2% Duty Cycle Typical Junction Capacitance (Note 2) Operating Junction Temperature Range TJ Storage Temperature Range TSTG 500 -65 to +150 - 102 - .. RATINGS AND CHARACTERISTIC CURVES (SR3020PT THRU SR3060PT) FIG.1- FORWARD...