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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM70N600ACL Datasheet

N-Channel Power MOSFET

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TSM70N600ACL
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 8A, 0.6Ω
FEATURES
Super-Junction technology
High performance, small RDS(ON)*Qg figure of merit (FOM)
High ruggedness performance
100% UIS and Rg tested
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
700
0.6
12.6
V
Ω
nC
APPLICATIONS
Power Supply
AC/DC LED Lighting
TO-262S (I2PAK SL)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulse Avalanche Energy (Note 3)
Single Pulse Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
IAS
TJ, TSTG
700
±30
8
4.6
24
83
100
2
- 55 to +150
UNIT
V
V
A
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
1.5 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum
recommended footprint in still air.
1 Version: A1609


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM70N600ACL Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM70N600ACL
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
(Note 4)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±30V, VDS = 0V
VDS = 700V, VGS = 0V
VGS = 10V, ID = 2.4A
BVDSS
VGS(TH)
IGSS
IDSS
RDS(on)
700
2.0
--
--
--
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Gate Resistance
Switching (Note 6)
VDS = 380V, ID = 8A,
VGS = 10V
VDS = 100V, VGS = 0V,
f = 1.0MHz
f = 1.0MHz
Qg
Qgs
Qgd
Ciss
Coss
Rg
--
--
--
--
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380V,
RGEN = 25Ω,
ID = 8A, VGS = 10V
td(on)
tr
td(off)
tf
--
--
--
--
Source-Drain Diode
Forward On Voltage (Note 4)
IS = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
VR=200V, IS = 4A
dIF/dt = 100A/μs
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. L = 50mH, IAS = 2A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
4. Pulse test: PW 300µs, duty cycle 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
VSD
trr
Qrr
--
--
--
TYP
--
2.9
--
--
0.53
12.6
2.9
4.5
743
63
3.6
36
21
95
21
--
187.9
1.4
MAX UNIT
--
4.0
±100
1
0.6
V
V
nA
µA
Ω
--
-- nC
--
--
pF
--
7.2 Ω
--
--
ns
--
--
1.4 V
-- ns
-- μC
ORDERING INFORMATION
PART NO.
TSM70N600ACL X0G
PACKAGE
TO-262S (I2PAK SL)
PACKING
50pcs / Tube
2 Version: A1609


Part Number TSM70N600ACL
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
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