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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM60NB380CH Datasheet

N-Channel Power MOSFET

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TSM60NB380CH
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 9.5A, 0.38Ω
FEATURES
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
600 V
0.38 Ω
19.4 nC
APPLICATIONS
Power Supply
Lighting
TO-251 (IPAK)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
IPAK/DPAK
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
VDS
VGS
ID
IDM
600
±30
9.5
6
28.5
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
PDTOT
EAS
IAS
TJ, TSTG
83
64
1.6
- 55 to +150
UNIT
V
V
A
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
IPAK/DPAK
UNIT
Junction to Case Thermal Resistance
RӨJC
1.5 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air.
1 Version: A1608


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM60NB380CH Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM60NB380CH
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
(Note 4)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±30V, VDS = 0V
VDS = 600V, VGS = 0V
VGS = 10V, ID = 2.85A
BVDSS
VGS(TH)
IGSS
IDSS
RDS(on)
600
2
--
--
--
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Gate Resistance
Switching (Note 6)
VDS = 380V, ID = 9.5A,
VGS = 10V
VDS = 100V, VGS = 0V,
f = 1.0MHz
F = 1MHz, open drain
Qg
Qgs
Qgd
Ciss
Coss
Rg
--
--
--
--
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380V,
RGEN = 25Ω,
ID = 9.5A, VGS = 10V,
td(on)
tr
td(off)
tf
--
--
--
--
Source-Drain Diode
Forward Voltage (Note 4)
IS = 9.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
VR = 100V, IS = 9.5A
dIF/dt = 100A/μs
Notes:
1. Current limited by package.
2. Pulse width limited by the maximum junction temperature.
3. L = 50mH, IAS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
4. Pulse test: PW 300µs, duty cycle 2%.
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
VSD
trr
Qrr
--
--
--
TYP
--
3
--
--
0.26
19.4
3.5
8.9
795
67
3.1
23.6
11.6
66
9.6
--
272
2.9
MAX UNIT
--
4
±100
1
0.38
V
V
nA
µA
Ω
--
-- nC
--
--
pF
--
-- Ω
--
--
ns
--
--
1.4 V
-- ns
-- μC
ORDERING INFORMATION
PART NO.
TSM60NB380CH C5G
PACKAGE
TO-251 (IPAK)
PACKING
75pcs / Tube
2 Version: A1608


Part Number TSM60NB380CH
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
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