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TSM60NB380CH
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 9.5A, 0.38Ω
FEATURES
● Super-Junction technology ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
600 V 0.38 Ω 19.4 nC
APPLICATIONS
● Power Supply ● Lighting
TO-251 (IPAK)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
IPAK/DPAK
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
VDS VGS
ID
IDM
600 ±30 9.5
6 28.
TSM60NB380CH Datasheet
