Datasheet Summary
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 3A, 1.4Ω
Features
- Super-Junction technology
- High performance due to small figure-of-merit
- High ruggedness performance
- High mutation performance
- 100% UIL tested
- Pb-free plating
- pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS RDS(on) (max)
Qg
600 V 1.4 Ω 7.12 nC
APPLICATIONS
- Power Supply
- Lighting
TO-252 (DPAK)
Note: MSL 3 (Moisture Sensitivity Level) per...