TSM2308 Datasheet | Taiwan Semiconductor

Features - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Application - DC-DC Power System - Load Switch Ordering Information Part No. Package Packing TSM2308CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes Halogen Free Product. Block Diagram N-Channel MOSFET Absolute Maximum Rating (TA=25o C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation TA=25o C TA=75o C Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM IS TJ TJ, TSTG Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on a 1 in2 pad of 2oz Cu, t ≤ 5 sec. Symbol RӨJC RӨJA Limit 60 ±20 3 6 3 1.25 0.8 +150 -55 to +150 Limit 80...