TSM2307CX - 30V P-Channel MOSFET

Description

only.

No license, express or implied, to any intellectual property rights is granted by this document.

Features

Advance Trench Process Technology.
High Density Cell Design for Ultra Low On-resistance.

Taiwan Semiconductor

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Datasheet Details

Part number	TSM2307CX
Manufacturer	Taiwan Semiconductor
File Size	596.39 KB
Description	30V P-Channel MOSFET
Datasheet	TSM2307CX Datasheet
Additional preview pages of the TSM2307CX datasheet.

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TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 95 140 Qg 10 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No.

Published: Apr 8, 2016 |