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TSM2305 - P-Channel Power MOSFET

Description

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Features

  • Advance Trench Process Technology.
  • High Density Cell Design for Ultra Low On-resistance.

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📁 Similar Datasheet

Part Number Description Manufacturer
TSM2301 20V P-Channel Enhancement Mode MOSFET Taiwan Semiconductor Company
TSM2301B 20V P-Channel MOSFET Taiwan Semiconductor Company
TSM2302 20V N-Channel Enhancement Mode MOSFET Taiwan Semiconductor Company
TSM2306 30V N-Channel MOSFET Taiwan Semiconductor Company
TSM2307 30V P-Channel MOSFET Taiwan Semiconductor Company

Other Datasheets by Taiwan Semiconductor

Part Number Description
TSM2301A 20V P-Channel MOSFET
TSM2302CX N-Channel Power MOSFET
TSM2303 P-Channel Power MOSFET
TSM2307CX 30V P-Channel MOSFET
TSM2308 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM2305 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 52 @ VGS =-4.5V -20 71 @ VGS =-2.5V 108 @ VGS =-1.8V ID (A) -3.2 -2.7 -2.0 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Battery Management ● High Speed Switch Ordering Information Part No. Package Packing TSM2305CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes Halogen Free Product.
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