TSM2303 Datasheet | Taiwan Semiconductor

atures - Advance Trench Process Technology - High Density Cell Design for Ultra Low On-resistance Application - Portable Devices - High Speed Switch Ordering Information Part No. Package Packing TSM2303CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes Halogen Free Product. Block Diagram P-Channel MOSFET Absolute Maximum Rating (TA=25o C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation TA=25o C TA=75o C Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM IS TJ TJ, TSTG Thermal Performance Parameter Junction to Case Thermal...