TSM2302CX
TSM2302CX is N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES
- Low RDS(ON) to minimize conductive losses
- Low gate charge for fast power switching
- pliant to Ro HS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
APPLICATIONS
- Load switch
- Backlights
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
RDS(on) (max)
VGS = 4.5V VGS = 2.5V
Qg
20 65 95 7.8
V mΩ n C
SOT-23
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS 20
Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current Total Power Dissipation
Total Power Dissipation
TC = 25°C TA = 25°C
TC = 25°C TC = 125°C TA = 25°C TA = 125°C
VGS ID IDM PD
±8 3.9 3.2 15.6 1.5 0.3 1 0.2
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
UNIT V V A A W
W °C
THERMAL...
