900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM2302CX Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM2302CX
Taiwan Semiconductor
N-Channel Power MOSFET
20V, 3.9A, 65mΩ
FEATURES
Low RDS(ON) to minimize conductive losses
Low gate charge for fast power switching
Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Load switch
Backlights
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 4.5V
VGS = 2.5V
Qg
20
65
95
7.8
V
mΩ
nC
SOT-23
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS 20
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
TC = 25°C
TA = 25°C
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
VGS
ID
IDM
PD
PD
±8
3.9
3.2
15.6
1.5
0.3
1
0.2
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
UNIT
V
V
A
A
W
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
84 °C/W
Junction to Ambient Thermal Resistance
RӨJA
124 °C/W
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1 Version: E1608


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM2302CX Datasheet

N-Channel Power MOSFET

No Preview Available !

TSM2302CX
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL MIN
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µ A
BVDSS
VGS(TH)
20
0.65
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-State Resistance
(Note 2)
Forward Transconductance (Note 2)
Dynamic (Note 3)
VGS = ±8V, VDS = 0V
VGS = 0V, VDS = 20V
VGS = 0V, VDS = 20V
TJ = 125°C
VGS = 4.5V, ID = 3.2A
VGS = 2.5V, ID = 3.2A
VDS = 5V, ID = 3.2A
IGSS
IDSS
RDS(on)
gfs
--
--
--
--
--
--
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching (Note 3)
VGS = 4.5V, VDS = 10V,
ID = 3.2A
VGS = 2.5V, VDS = 10V,
ID = 3.2A
VGS = 0V, VDS = 10V
f = 1.0MHz
f = 1.0MHz, open drain
Qg
Qg
Qgs
Qgd
Ciss
Coss
Crss
Rg
--
--
--
--
--
--
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS = 4.5V, VDS = 10V,
ID = 3.2A, RG = 2Ω,
td(on)
tr
td(off)
tf
--
--
--
--
Source-Drain Diode
Forward Voltage (Note 2)
VGS = 0V, IS = 3.2A
VSD
Reverse Recovery Time
Reverse Recovery Charge
IS = 3.2A ,
dI/dt = 100A/μs
trr
Qrr
Notes:
1. Silicon limited current only.
2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
3. Switching time is essentially independent of operating temperature.
--
--
--
TYP
--
0.9
--
--
--
34
45
19
7.8
5
1
2.5
587
94
64
1.6
5.4
26.4
16.4
15.8
--
19
8
MAX UNIT
--
1.2
±100
1
100
65
95
--
V
V
nA
µA
mΩ
S
--
-- nC
--
--
--
-- pF
--
-- Ω
--
--
ns
--
--
1.2 V
-- ns
-- nC
ORDERING INFORMATION
PART NO.
TSM2302CX RFG
PACKAGE
SOT-23
PACKING
3,000pcs / 7Reel
2 Version: E1608


Part Number TSM2302CX
Description N-Channel Power MOSFET
Maker Taiwan Semiconductor
PDF Download

TSM2302CX Datasheet PDF






Similar Datasheet

1 TSM2302CX N-Channel Power MOSFET
Taiwan Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy